However, the HgCdTe-based APDs suffer from drawbacks such as material instability and low fabrication yields 9, 10. Compared with the HPTs, the APDs can amplify weak signals without the relatively more complicated HPT device structure 6.įor MWIR APD devices, HgCdTe is the state-of-art material system and has been widely used in infrared APDs 7, 8. ![]() Therefore, gain-based devices such as heterojunction phototransistors (HPTs) and avalanche photodiodes (APDs) are used to achieve the necessary photoresponse when the incoming photon flux is low 3, 4, 5. In most of these applications there is a need to increase the capability of the system to detect light in a low photon flux situation. ![]() Mid-wavelength infrared (MWIR) photodetectors which can operate under the low flux conditions are of great interest for long-range military and astronomical applications 1, 2.
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